Electronic charge transfer at Epitaxial Graphene Interfaces

Thushari Jayasekera

Department of Physics,

Southern Illinois University Carbondale

Tuesday, November 19, 2013

3:30 p.m., Room 104, Physics Building

Refreshments

3:15 p.m., Room 104

ABSTRACT: Graphene is a natural two-dimensional honeycomb lattice of sp2 hybridized network of carbon, which shows extra-ordinary electronic properties, thus it is continuing towards the next generation of electronics. Advances in the growth techniques for large-scale fabrication of graphene are the key to sustain this progress. Epitaxial graphene, the sp2 hybridized network of carbon grown on another material is one way of creating largescale graphene. In this talk, I will be talking about possible ways of engineering the electronic band structure of epitaxial graphene on SiC. In particular, on the Si-face of SiC, intercalation of different atomic species, such as Hydrogen, Fluorine, Sodium, Germanium, Carbon and Silicon are shown to modify and tune the interface electronic properties and band alignments. Our results based on First Principles Density Functional Theory Calculations, along with the experimental proof, suggest that atomic intercalation in graphene is quite different from that in graphite, and could provide a fundamentally new way to achieve the controlled charge transfer for graphene electronics.